1 AM4835EP analog power preliminary publication order number: ds-am4835e_c these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. s s s g 1 2 3 4 soic-8 top view d d d d 8 7 6 5 s d g p-channel mosfet p-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature v ds (v) r ds(on) m( ? )i d (a) 19 @ v gs = -10v -9.5 30 @ v gs = -4.5v -7.5 product summary -30 symbol maximum units v ds -30 v gs 25 t a =25 o c-9.5 t a =70 o c-8.3 i dm 50 i s -2.1 a t a =25 o c3.1 t a =70 o c2.6 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units maximum junction-to-case a t <= 5 sec r jc 25 o c/w maximum junction-to-ambient a t <= 10 sec r ja 50 o c/w thermal resistance ratings parame te r
2 AM4835EP analog power preliminary publication order number: ds-am4835e_c notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max drain-source breakdown voltage v (br)dss v gs = 0 v, i d = -250 ua -30 ga t e -t h re s h o ld vo lt a g e v gs(th) v ds = v gs , i d = -250 ua -1 -1.6 -3 gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 200 na v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -50 a v gs = -10 v, i d = -9.5 a 16 19 v gs = -4.5 v, i d = -7.5 a 26 30 v gs = -10 v, i d = -9.5 a, t j = 55 o c2029 forward tranconductance a g fs v ds = -15 v, i d = -9.5 a 31 s diode forward voltage v sd i s = -2.1 a, v gs = 0 v -0.7 -1.2 v total gate charge q g 12.8 20 gate-source charge q gs 4.5 gate-drain charge q gd 5 turn-on delay time t d(on) 15 26 ris e time t r 12 21 turn-off delay time t d(off) 62 108 fall-time t f 46 71 drain-source on-resistance a r ds(on) m ? parameter limits unit v dd = -15 v, r l = 15 ? , i d = -1 a, v gen = -10 v, r g = 6 ? ns v ds = -15 v, v gs = -4.5 v, i d = -9.5 a nc dynamic b switching specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static v te s t conditions symbol
3 AM4835EP analog power preliminary publication order number: ds-am4835e_c typical electrical characteristics (p-channel) figure 3. on-resistance variation with temperature figure 5. transfer characteristics figure 2. on-resistance with drain current figure 4. on-resistance variation with gate to source voltage 0.1 1 10 100 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 v sd source to drain voltage (v) i source current (a) t j = 150 c t j = 25c figure 6. body diode forward voltage variation with source current and temperature 0 10 20 30 40 50 00.5 11.522.533.54 v ds (v) ids drain current (a) 3.5 3 4 v 4.5 v 5 v thr ough 10 v figure 1. on-region characteristics 0 0.008 0.016 0.024 0.032 0.04 0 10 20304050 i d drain current (a) rds(on) resistance ( ? ) v gs =10v v gs =4.5 v 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j juncation temperature (oc) normalized r ds (on) v gs = 10v i d = 9.5a 0 0.01 0.02 0.03 0.04 0.05 0.06 02 46 810 v gs gate to source voltage (v) r resist ance ( ? ) 0 10 20 30 40 50 60 0123456 v gs gate to so urce vo ltage (v) i d drain current (a) 25c 125c -55c v d =v g
4 AM4835EP analog power preliminary publication order number: ds-am4835e_c typical electrical characteristics (p-channel) figure 11. transient th ermal response curve 0 500 1000 1500 2000 0 5 10 15 2 0 v ds (v) capacitance (pf) ciss coss crss figure 8. capacitance characteristics figure 10. single pulse maximum power dissipation normalized thermal transien t junction to ambient 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse .02 .05 .1 .2 .5 p dm t 1 t2 1. duty cycal d = t1/t2 2. p e r unit b a s e r ja =70c/w 3. t jm - t a = p dm z jc 4. s ure fa c e m o unte d square wave pulse duration (s) figure 9. maximum safe operating area 0 2 4 6 8 10 0 5 10 15 20 25 30 qg, total gate charge (nc) vgs gate to source ( v v d = 10 v i d = - 9 .5a figure 7. gate charge characteristics 0.01 0.1 1 10 10 0 0.1 1 10 100 v ds drain to source voltage (v) i d curre n 10 u s 10 0 u s 1m s 10 m s 10 0 1 10 s 10 0 s d c i d limited r ds ( on) 1s 0 5 10 15 20 25 30 35 40 45 50 0.001 0.1 10 1000 time(s) power ( w
5 AM4835EP analog power preliminary publication order number: ds-am4835e_c package information so-8: 8lead h x 45
6 AM4835EP analog power preliminary publication order number: ds-am4835e_c ordering information ? AM4835EP-t1-xx ?a: analog power ? m: mosfet ? 4835: part number ? e: esd protected ? p: p-channel ? t1: tape & reel ? xx: blank: standard pf: leadfree
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